Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

被引:0
|
作者
Liu, Jiaqiang [1 ]
Zha, Xi [1 ]
Lu, Qi [1 ]
Liang, Liwen [1 ]
Wang, Wenli [1 ]
Hu, Zhongqiang [1 ]
Guo, Zhixin [2 ]
Wang, Zhiguang [1 ]
Liu, Ming [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Engn Res Ctr Spin Quantum Sensor Chips, State Key Lab Mfg Syst Engn,Elect Mat Res Lab, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Ctr Spintron & Quantum Syst, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
基金
国家重点研发计划; 中国博士后科学基金;
关键词
metallic multilayers; spin-orbit torque; field-free perpendicular magnetization switching; out-of-planespin polarization;
D O I
10.1021/acsami.4c10495
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The realization of the all-electrical manipulation of perpendicular magnetization switching is essential for next-generation information storage technologies and spintronic devices. Current-induced spin-orbit torque (SOT) has attracted tremendous research interest. However, this approach usually relies on external magnetic field to achieve deterministic switching, which greatly limits SOT devices moving toward practical applications. Here, we report the measurement of SOT from the [Pt/Au] multilayer with composition gradient along the thickness direction. The multilayer exhibits a much larger SOT efficiency than pure Pt, and current-induced field-free magnetization switching has been realized in Co/[Pt/Au] heterostructures. Anomalous Hall resistance loop shift measurements indicate that the [Pt/Au] multilayer can produce spin current with z-direction polarization. Moreover, the results of the control experiments show that the Pt/Au interface is the primary cause of the z-direction polarized spin current for triggering field-free switching, whereas the compositional gradient effect is peripheral. We speculate that the field-free switching originates from the synergetic interface effect and Dzyaloshinskii-Moriya interaction. Our work not only paves the way for SOT devices toward practical application but also provides novel insights into the mechanisms governing current-induced deterministic perpendicular magnetization switching.
引用
收藏
页码:49966 / 49972
页数:7
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