Exciton diffusion in organic semiconductors: precision and pitfalls

Nanometer exciton diffusion is a fundamental process important in virtually all applications of organic semiconductors. Many measurement techniques have been developed to measure exciton diffusion length (LD) at the nanometer scale; however, these techniques have common challenges that the community has worked for decades to overcome. In this perspective, we lay out the principal challenges researchers need to overcome to obtain an accurate measurement of LD. We then examine the most common techniques used to measure LD with respect to these challenges and describe solutions developed to overcome them. This analysis leads to the suggestion that static quenching techniques underestimate LD due to uncertainties in the quenching behavior, while time-resolved exciton-exciton annihilation (EEA) techniques overestimate LD based on experimental conditions, we advance steady-state EEA techniques as an alternative that overcome many of the challenges of these other techniques while preserving accuracy. We support this hypothesis with a meta-analysis of LD measured across various organic semiconductors and measurement techniques. We intend this investigation to provide a framework for researchers to interpret and compare findings across measurement techniques and to guide researchers on how to obtain the most accurate results for each technique in question. The fundamentals of and techniques for measuring exciton diffusion length in organic semiconductors are described, focusing on inherent challenges and developed solutions. Discrepancies between measurements are explored and their origins explained.