Transistor Matrix Array for Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures

被引：0

作者：

Mizutani, Tomoko ^{[1
]}

Takeuchi, Kiyoshi ^{[1
]}

Saraya, Takuya ^{[1
]}

Oka, Hiroshi ^{[3
]}

Mori, Takahiro ^{[3
]}

Kobayashi, Masaharu ^{[1
,2
]}

Hiramoro, Toshiro ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo, Japan

[2] Univ Tokyo, Syst Design Lab D Lab, Tokyo, Japan

[3] Natl Inst Adv Ind Sci & Technol, Ibaraki, Japan

来源：

2024 IEEE 36TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, ICMTS 2024 | 2024年

关键词：

Cryogenic; CMOS; variability; random telegraph noise (RTN); NANOMETER CMOS; MISMATCH; SIGNALS; CHIP;

D O I：

10.1109/ICMTS59902.2024.10520700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Addressable transistor arrays using 65 nm bulk technology were fabricated and tested at cryogenic temperatures. It was confirmed that variability at 1.5 K slightly degrades compared with 300 K. Random telegraph noise (RTN) was also measured and existence of extremely slow RTN at 1.5 K was confirmed using a quasi-parallel measurement technique. Such test structures will be particularly useful for enhancing cryogenic measurement efficiency.

引用

页数：5

共 40 条

[1] Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures
Ma, Yue
Bi, Jinshun
Wang, Hanbin
Fan, Linjie
Zhao, Biyao
Shen, Lizhi
Liu, Mengxin
NANOMATERIALS, 2022, 12 (23)
[2] Gate Delay Variability due to Random Telegraph Noise
Barbosa, Rodolfo G.
Both, Thiago H.
Wirth, Gilson
35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021), 2021,
[3] Variability of Random Telegraph Noise in Analog MOS Transistors
Nour, Mohamed
Mahmud, M. Iqbal
Celik-Butler, Zeynep
Basu, Debarshi
Tang, Shaoping
Hou, Fan-Chi
Wise, Rick
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2013,
[4] New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature
Wang, Zirui
Wang, Haoran
Wang, Yuxiao
Sun, Zixuan
Zeng, Lang
Wang, Runsheng
Huang, Ru
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024, 2024,
[5] Random telegraph noise from resonant tunnelling at low temperatures
Li, Zuo
Sotto, Moise
Liu, Fayong
Husain, Muhammad Khaled
Yoshimoto, Hiroyuki
Sasago, Yoshitaka
Hisamoto, Digh
Tomita, Isao
Tsuchiya, Yoshishige
Saito, Shinichi
SCIENTIFIC REPORTS, 2018, 8
[6] Random telegraph noise from resonant tunnelling at low temperatures
Zuo Li
Moïse Sotto
Fayong Liu
Muhammad Khaled Husain
Hiroyuki Yoshimoto
Yoshitaka Sasago
Digh Hisamoto
Isao Tomita
Yoshishige Tsuchiya
Shinichi Saito
Scientific Reports, 8
[7] Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures
Li, Z.
Sotto, M.
Liu, F.
Husain, M. K.
Zeimpekis, I.
Yoshimoto, H.
Tani, K.
Sasago, Y.
Hisamoto, D.
Fletcher, J. D.
Kataoka, M.
Tsuchiya, Y.
Saito, S.
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM), 2017, : 172 - 174
[8] Understanding switching variability and random telegraph noise in resistive RAM
Ambrogio, S.
Balatti, S.
Cubeta, A.
Calderoni, A.
Ramaswamy, N.
Ielmini, D.
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
[9] Random Telegraph Noise Read Instability Characteristics in a Megabit RRAM Array
Wu, Chun-Yu
Kuo, Wen-Hsien
Wang, Wayne
Lee, Yung-Huei
Chu, Wen-Ting
Chang, Chih-Yang
Liao, Ta-Chuan
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (11) : 1644 - 1647
[10] Time Dependent Threshold Voltage Variability due to Random Telegraph Noise
Wirth, Gilson
LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC 2020), 2020,

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