共 28 条
- [1] Artificial Nociceptor Using 2D MoS2 Threshold Switching MemristorIEEE ELECTRON DEVICE LETTERS, 2020, 41 (09) : 1440 - 1443论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [2] Modeling and emulation of artificial nociceptor based on TiO2 threshold switching memristorMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2023, 290Zhang, Yupeng论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaWang, Fang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaShan, Xin论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaLin, Xin论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaZhao, Xuanyu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaZhou, Qiaozhen论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaShan, Ke论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaMa, Zexia论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaChen, Gang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaWang, Xi论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaHuang, Dianchen论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R ChinaZhang, Kailiang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
- [3] 2D MoS2-Based Threshold Switching Memristor for Artificial NeuronIEEE ELECTRON DEVICE LETTERS, 2020, 41 (06) : 936 - 939论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:He, Zhezhi论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA Univ Cent Florida, Nanosci Technol Ctr, Orlando, FL 32826 USA论文数: 引用数: h-index:机构:Fan, Deliang论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA Univ Cent Florida, Nanosci Technol Ctr, Orlando, FL 32826 USAChung, Hee-Suk论文数: 0 引用数: 0 h-index: 0机构: Korea Basic Sci Inst, Analyt Res Div, Jeonju 54907, South Korea Univ Cent Florida, Nanosci Technol Ctr, Orlando, FL 32826 USA论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [4] 2D MoS2-Based Threshold Switching Memristor for Artificial NeuronIEEE Electron Device Letters, 2020, 41 (06): : 936 - 939论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:He, Zhezhi论文数: 0 引用数: 0 h-index: 0机构: School of Electrical Computer and Energy Engineering, Arizona State University, Tempe,AZ,85281, United States Nanoscience Technology Center, University of Central Florida, Orlando,FL,32826, United States论文数: 引用数: h-index:机构:Fan, Deliang论文数: 0 引用数: 0 h-index: 0机构: School of Electrical Computer and Energy Engineering, Arizona State University, Tempe,AZ,85281, United States Nanoscience Technology Center, University of Central Florida, Orlando,FL,32826, United StatesChung, Hee-Suk论文数: 0 引用数: 0 h-index: 0机构: Analytical Research Division, Korea Basic Science Institute, Jeonju,54907, Korea, Republic of Nanoscience Technology Center, University of Central Florida, Orlando,FL,32826, United States论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [5] Embedded Hybrid-Dimensional Heterointerface for Filament Modulation in 2D Material-Based Artificial NociceptorADVANCED SCIENCE, 2024, 11 (36)Huang, Chang-Hsun论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, TaiwanCheng, Te-Yu论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, TaiwanWu, Chia-Yi论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, TaiwanChen, Kuan-Hung论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, TaiwanWu, Tian-Li论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, TaiwanChou, Yi-Chia论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan
- [6] Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS2 SurfacePHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (14):Yin, Siqi论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China Tsinghua Univ, CBICR, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaLuo, Zhaochu论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Inst Technol, Dept Mat, CH-8093 Zurich, Switzerland Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaLi, Qian论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Life Sci, MOE Key Lab Prot Sci, McGovern Inst Brain Res,Tsinghua Peking Ctr Life, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaXiong, Chengyue论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China Tsinghua Univ, CBICR, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaLiu, Yunlong论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Life Sci, MOE Key Lab Prot Sci, McGovern Inst Brain Res,Tsinghua Peking Ctr Life, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China论文数: 引用数: h-index:机构:Zeng, Fei论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China Tsinghua Univ, CBICR, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaZhong, Yi论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Life Sci, MOE Key Lab Prot Sci, McGovern Inst Brain Res,Tsinghua Peking Ctr Life, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaZhang, Xiaozhong论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China Tsinghua Univ, CBICR, Beijing 100084, Peoples R China Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
- [7] Memristor based on a layered FePS3 2D material with dual modes of resistive switchingAPPLIED PHYSICS EXPRESS, 2020, 13 (10)Zhao, Guihua论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaKe, Xi论文数: 0 引用数: 0 h-index: 0机构: Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaLi, Xusheng论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaWang, Li论文数: 0 引用数: 0 h-index: 0机构: Neijiang Normal Univ, Sch Chem & Chem Engn, Neijiang 641100, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaYin, Ningyuan论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaJin, Xing论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaChen, Jianjun论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaXu, Yitong论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaWang, Kai论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaYu, Xiaolan论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Chem, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R ChinaYu, Zhiyi论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China Sun Yat Sen Univ, Sch Microelect Sci & Technol, Zhuhai 519082, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China
- [8] Memristor based on a layered FePS3 2D material with dual modes of resistive switchingYu, Zhiyi (yuzhiyi@mail.sysu.edu.cn), 1600, IOP Publishing Ltd (13):Zhao G.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouKe X.论文数: 0 引用数: 0 h-index: 0机构: School of Materials and Energy, Guangdong University of Technology, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouLi X.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouWang L.论文数: 0 引用数: 0 h-index: 0机构: School of Chemistry and Chemical Engineering, Neijiang Normal University, Neijiang School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouYin N.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouJin X.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouChen J.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouXu Y.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouWang K.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouYu X.论文数: 0 引用数: 0 h-index: 0机构: School of Chemistry, Sun Yat-sen University, Guangzhou School of Electronics and Information Technology, Sun Yat-sen University, GuangzhouYu Z.论文数: 0 引用数: 0 h-index: 0机构: School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou
- [9] Threshold Switching Memristor Based on 2D SnSe for Nociceptive and Leaky-Integrate and Fire Neuron SimulationACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (07) : 4939 - 4947Qin, Yuwei论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R China Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R ChinaWu, Mengfan论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R China Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R ChinaYu, Niannian论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R China Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R ChinaChen, Ziqi论文数: 0 引用数: 0 h-index: 0机构: Jianghan Univ, Sch Artificial Intelligence, Wuhan 430056, Peoples R China Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R ChinaYuan, Junhui论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R China Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R ChinaWang, Jiafu论文数: 0 引用数: 0 h-index: 0机构: Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R China Wuhan Univ Sci & Technol, Sch Sci, Wuhan 430070, Peoples R China
- [10] Optical-Electrical Coordinately Modulated Memristor Based on 2D Ferroelectric RP Perovskite for Artificial Vision ApplicationsADVANCED SCIENCE, 2024,Wang, Hong论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R ChinaYang, Jialiang论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R ChinaYang, Zheng论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R ChinaLiu, Gongjie论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R ChinaTang, Yusong论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R ChinaShao, Yiduo论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R ChinaYan, Xiaobing论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore Hebei Univ, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Hebei Key Lab Photoelect Informat & Mat, Baoding 071002, Peoples R China