An Artificial Universal Tactile Nociceptor Based on 2D Polymer Film Memristor Arrays with Tunable Resistance Switching Behaviors

被引:2
|
作者
Du, Shaolin [1 ,2 ,3 ]
Song, Yaru [1 ,2 ,3 ,4 ]
Yuan, Jiangyan [1 ,2 ,3 ]
Hao, Ruisha [1 ,2 ,3 ]
Wu, Lingli [6 ]
Lei, Shengbin [1 ,2 ,3 ,5 ]
Hu, Wenping [1 ,2 ,3 ]
机构
[1] Tianjin Univ, Key Lab Organ Integrated Circuits, Minist Educ, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
[4] Shandong Dongyue Polymer Mat Co Ltd, State Key Lab Fluorinated Funct Membrane Mat, Zibo 256401, Peoples R China
[5] Lanzhou Jiaotong Univ, Sch Chem & Chem Engn, Lanzhou 730070, Peoples R China
[6] Northwest Minzu Univ, Med Coll, Lanzhou 730030, Peoples R China
基金
中国国家自然科学基金;
关键词
nociceptor; memristor array; 2D polymer; tunable memory behaviors; tactile; MEMORY CHARACTERISTICS; PAIN; TRANSIENT;
D O I
10.1021/acsami.4c05112
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nociceptor is an important receptor in the organism's sensory system; it can perceive harmful stimuli and send signals to the brain in order to protect the body in time. The injury degree of nociceptor can be divided into three stages: self-healing injury, treatable injury, and permanent injury. However, the current studies on nociceptor simulation are limited to the self-healing stage due to the limitation of the untunable resistance switching behavior of memristors. In this study, we constructed Al/2DP(TPAK+TAPB)/Ag memristor arrays with adjustable memory behaviors to emulate the nociceptor of biological neural network of all three stages. For this purpose, a PDMS/AgNWs/ITO/PET pressure sensor was assembled to mimic the tactile perception of the skin. The memristor arrays can not only simulate all the response of nociceptor, i.e., the threshold, relaxation, no adaptation, and sensitization with the self-healing injury, but can also simulate the treatable injury and the permanent injury. These behaviors are both demonstrated with a single memristor and in the form of pattern mapping of the memristor array.
引用
收藏
页码:33907 / 33916
页数:10
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