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Enhancing Sensitivity in Gas Detection: Porous Structures in Organic Field-Effect Transistor-Based Sensors
被引:0
|作者:
Lim, Soohwan
[1
]
Nguyen, Ky Van
[1
]
Lee, Wi Hyoung
[1
]
机构:
[1] Konkuk Univ, Sch Chem Engn, Dept Mat Sci & Engn, Seoul 05029, South Korea
来源:
关键词:
organic semiconductor;
organic field-effect transistors;
gas sensor;
sensitivity;
porous structure;
microstructure;
THIN-FILM-TRANSISTOR;
BREATH FIGURE;
POLYMER-FILMS;
SUB-PPM;
SEMICONDUCTOR;
PENTACENE;
AMMONIA;
THICKNESS;
SOLVENT;
GROWTH;
D O I:
10.3390/s24092862
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
Gas detection is crucial for detecting environmentally harmful gases. Organic field-effect transistor (OFET)-based gas sensors have attracted attention due to their promising performance and potential for integration into flexible and wearable devices. This review examines the operating mechanisms of OFET-based gas sensors and explores methods for improving sensitivity, with a focus on porous structures. Researchers have achieved significant enhancements in sensor performance by controlling the thickness and free volume of the organic semiconductor layer. Additionally, innovative fabrication techniques like self-assembly and etching have been used to create porous structures, facilitating the diffusion of target gas molecules, and improving sensor response and recovery. These advancements in porous structure fabrication suggest a promising future for OFET-based gas sensors, offering increased sensitivity and selectivity across various applications.
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页数:18
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