Deep insights into the optoelectronic properties of AgCdF 3-based perovskite solar cell using the combination of DFT and SCAPS-1D simulation

被引:0
|
作者
Zahra, Fatema-Tuz [1 ]
Hasan, Mehidi [1 ]
Hossen, Bokhtiar [1 ]
Islam, Rasidul [2 ]
机构
[1] Khulna Univ Engn & Technol KUET, Dept Mat Sci & Engn, Khulna 9203, Bangladesh
[2] Bangamata Sheikh Fojilatunnesa Mujib Sci & Techno, Dept Elect & Elect Engn, Jamalpur 2012, Bangladesh
关键词
DFT; AgCdF3; SCAPS; Solar cell; Optoelectronic properties; HALIDE PEROVSKITES; OPTICAL-PROPERTIES; BAND OFFSETS; PERFORMANCE; DESIGN;
D O I
10.1016/j.heliyon.2024.e33096
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The main focus of this research is to explore the properties and photovoltaic application of AgCdF3, and hence, initially, the CASTEP software was used in this study to assess the structural, optical, mechanical, and electrical characteristics of the AgCdF3 perovskite absorber layer within the context of the density functional theory (DFT) method. AgCdF3 resulting from the structural research is confirmed to be chemically and thermodynamically stable by the estimated tolerance factor and formation enthalpy. According to the band structure analysis, AgCdF3 is an indirect band gap semiconductor with a band gap of 1.106 eV, where the electrons of Cd-4d and F-2s dominate the band edges of this semiconductor. Analysis of mechanical properties revealed that the AgCdF3 cubic perovskite has a stable structure and enhanced ductility, indicating superior machinability. After completing the DFT analysis, a one-dimensional solar cell capacitance simulator 1D (SCAPS-1D) was used with three popular electron transport layers (ETLs), including ZnO, PCBM, and C60, to examine the photovoltaic (PV) performance of various AgCdF3-based solar cell heterostructures. Based on simulation findings, the device design with ITO/ZnO/ AgCdF3/CuI/Au showed the highest photoconversion efficiency compared to the other configurations. A detailed analysis was conducted for the aforementioned configurations to determine the impact of variations in the absorber and ETL thickness on PV performance. Moreover, the effects of the three designs were assessed in terms of function, generation and recombination rate, capacitance, operating temperature, series and shunt resistance, and Mott-Schottky. Thus, this comprehensive simulation with validation results demonstrated the true potential of AgCdF3 absorber with appropriate ETLs such as ZnO, PCBM, and C60; on the other hand, the CuI as hole transport layer (HTL), paving the way for promising studies to develop high-efficiency AgCdF3 PSCs for the photovoltaic industry.
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页数:22
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