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Non-Hermitian Moire<acute accent> Valley Filter
被引:1
|作者:
Shao, Kai
[1
,2
]
Geng, Hao
[1
,2
]
Liu, Erfu
[1
,2
]
Lado, Jose L.
[3
]
Chen, Wei
[1
,2
]
Xing, D. Y.
[1
,2
]
机构:
[1] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
[3] Aalto Univ, Dept Appl Phys, Espoo 02150, Finland
基金:
芬兰科学院;
中国国家自然科学基金;
关键词:
GRAPHENE;
MOS2;
POLARIZATION;
GENERATION;
TRANSPORT;
VALVE;
BULK;
D O I:
10.1103/PhysRevLett.132.156301
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
A valley filter capable of generating a valley-polarized current is a crucial element in valleytronics, yet its implementation remains challenging. Here, we propose a valley filter made of a graphene bilayer which exhibits a 1D moire<acute accent> pattern in the overlapping region of the two layers controlled by heterostrain. In the presence of a lattice modulation between layers, electrons propagating in one layer can have valleydependent dissipation due to valley asymmetric interlayer coupling, thus giving rise to a valley-polarized current. Such a process can be described by an effective non-Hermitian theory, in which the valley filter is driven by a valley-resolved non-Hermitian skin effect. Nearly 100% valley polarization can be achieved within a wide parameter range and the functionality of the valley filter is electrically tunable. The nonHermitian topological scenario of the valley filter ensures high tolerance against imperfections such as disorder and edge defects. Our work opens a new route for efficient and robust valley filters while significantly relaxing the stringent implementation requirements.
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