Dynamics of phase transformations in Si and Ge upon strong excitation with UV femtosecond laser pulses

Femtosecond laser processing of semiconductors has evolved into a mature, high -precision fabrication technique, enabling a wide range of applications. While initially most studies have employed pulses at near infrared wavelengths, the interest in using UV laser pulses is constantly increasing due to the different excitation conditions as a consequence of the much shorter optical penetration depth, leading to an improved resolution. In this context, fundamental studies on the temporal dynamics of phase transformations triggered by such pulses are necessary in order to comprehend and eventually control the complex phase transformation pathways. Here, we report a detailed time -resolved study on the phase transformation dynamics of crystalline silicon and germanium upon irradiation with single 400 nm, 100 fs laser pulses in the moderate and high excitation regime. To this end, we have employed fs-resolved optical microscopy with a probe wavelength of 800 nm to study the reflectivity evolution of the irradiated surface over a temporal window ranging from 100 fs up to 20 ns. At moderate excitation fluence, the data reveals the entire sequence of laser -induced processes, starting from the generation of a free -electron plasma, non -thermal melting, ablation onset and expansion of a semi -transparent ablation layer with sharp interfaces. At excitation with peak fluences more than 30 times the ablation threshold, an anomalous transient highreflectivity state is observed, which might be indicative of a recoil pressure -induced liquid -liquid phase transition. Moreover, 70 nm-thick amorphous surface layers are formed in both materials after irradiation at moderate fluences. Overall, our results provide relevant information on both, transformation dynamics and final state of both materials for fs-pulse excitation in the near -UV wavelength range.