Machine-Learning-Based Interatomic Potentials for Group IIB to VIA Semiconductors: Toward a Universal Model

被引:0
|
作者
Liu, Jianchuan [1 ]
Zhang, Xingchen [2 ]
Chen, Tao [3 ]
Zhang, Yuzhi [4 ]
Zhang, Duo [4 ,5 ,6 ]
Zhang, Linfeng [4 ,6 ]
Chen, Mohan [2 ,6 ]
机构
[1] Xihua Univ, Sch Elect Engn & Elect Informat, Chengdu 610039, Peoples R China
[2] Peking Univ, Coll Engn, Beijing 100871, Peoples R China
[3] Peking Univ, Sch Phys, HEDPS, CAPT, Beijing 100871, Peoples R China
[4] DP Technol, Beijing 100080, Peoples R China
[5] Peking Univ, Acad Adv Interdisciplinary Studies, Ctr Machine Learning Res, Beijing 100871, Peoples R China
[6] AI Sci Inst, Beijing 100080, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
HIGH THERMAL-CONDUCTIVITY; ELASTIC-CONSTANTS; AB-INITIO; ELECTRONIC-PROPERTIES; SILICON-CARBIDE; 1ST-PRINCIPLES THEORY; MECHANICAL-PROPERTIES; SIC POLYTYPES; PHASE; 4H;
D O I
10.1021/acs.jctc.3c01320
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Rapid advancements in machine-learning methods have led to the emergence of machine-learning-based interatomic potentials as a new cutting-edge tool for simulating large systems with ab initio accuracy. Still, the community awaits universal interatomic models that can be applied to a wide range of materials without tuning neural network parameters. We develop a unified deep-learning interatomic potential (the DPA-Semi model) for 19 semiconductors ranging from group IIB to VIA, including Si, Ge, SiC, BAs, BN, AlN, AlP, AlAs, InP, InAs, InSb, GaN, GaP, GaAs, CdTe, InTe, CdSe, ZnS, and CdS. In addition, independent deep potential models for each semiconductor are prepared for detailed comparison. The training data are obtained by performing density functional theory calculations with numerical atomic orbitals basis sets to reduce the computational costs. We systematically compare various properties of the solid and liquid phases of semiconductors between different machine-learning models. We conclude that the DPA-Semi model achieves GGA exchange-correlation functional quality accuracy and can be regarded as a pretrained model toward a universal model to study group IIB to VIA semiconductors.
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收藏
页数:15
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