Exciton Localization Modulated by Ultradeep Moire Potential in Twisted Bilayer γ-Graphdiyne

Twisted moire superlattice is featured with its moire potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moire potential depth. Herein, owing to the p(z) orbital induced band edge states enabled by the unique sp-C in bilayer gamma-graphdiyne (GDY), an ultradeep moire potential of similar to 289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moire potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moire superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.