Ultra Broadband Tunable Power Splitter Based on Sb2Se3-Assisted Y-Junction

被引:1
|
作者
Su, Yuexing [1 ]
Zhang, Yuanrong [1 ]
Zhou, Xiaobing [1 ]
Liu, Deming [1 ,2 ]
Zhang, Minming [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
Integrated photonic devices; phase change material (PCM); tunable power splitter; Y-junction; NEXT-GENERATION; OPTICAL NETWORK; PON;
D O I
10.1109/JLT.2023.3347577
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
1 x 2 power splitter is the fundamental component of passive optical network (PON) with bus or ring topology. In existing PON architecture, uplink and downlink wavelengths distribute in a large wavelength range from O-band to L-band, which requires power splitter used in PON having a bandwidth of around 300 nm to cover both uplink and downlink wavelengths. Compared with currently used passive power splitters in ODN, tunable powers can make the network more adaptable to dynamic application requirements. In this work we propose a novel ultra-broadband tunable power splitter based on Sb2Se3-assisted Y- junction. By dividing the subwavelength Sb2Se3 array deposited on the branches into multiple batches and changing the proportion of crystalline Sb2Se3 unit in a batch, the effective refractive indices of branch waveguides are modified. Thus, tunable power splitting ratio from 100%:0% to 50%:50% can be achieved by single device. The device has a compact footprint of 53 x 4 mu m2. According to simulation results, at splitting ratio of 100%:0%, the crosstalk and excess loss (EL) are below -14.3 dB and 0.4 dB, respectively in a large bandwidth from 1300 nm to 1600 nm. While at other splitting ratios, the variation of splitting ratio is below +/- 3.5% and average EL is less than 0.33 dB. The proposed ultra broadband non-volatile tunable power splitter may help increasing the flexibility of PONs.
引用
收藏
页码:2817 / 2822
页数:6
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