Stable WSeTe/PtTe2 van der Waals heterojunction: Excellent mechanical, electronic, and optical properties and device applications

被引:2
|
作者
Zhao, Changsong [1 ]
Li, Zhanhai [1 ]
Zhang, Zhenhua [1 ]
机构
[1] Changsha Univ Sci & Technol, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Changsha 410114, Peoples R China
基金
中国国家自然科学基金;
关键词
van der Waals heterojunction; Mechanical property; Electronic property; Light absorption; Photoelectric power conversion efficiency; SOLAR-CELLS; HETEROSTRUCTURE; 1ST-PRINCIPLES; MONOLAYERS; SE; TE; OPTOELECTRONICS; PERFORMANCE; ABSORPTION; PTX2;
D O I
10.1016/j.apsusc.2024.160859
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Janus WSeTe and PtTe2 monolayers have attracted much attention due to their outstanding electronic properties. To explore their combined advantages and to find new physics, we construct WSeTe/PtTe2 vdW heterojunctions and use the most stable configurations A4 and B1 to explore their various physical properties and device applications. It is found that both A4 and B1 hold exceptional mechanical properties. They are type-II semiconductors, and types of band alignment and band gap size can be tuned flexibly by external electric field and vertical strain. Based on such a property, we design a strain-controlled high on-off-ratio mechanical switching device. They also show an excellent light response and high photoelectric power conversion efficiency (PCE), which can be tuned greatly by the external electric field and vertical strain as well. For example, light adsorption in visible and infrared region can be improved greatly by the compressive strain. Particularly, we find for B1 in the intrinsic state or with a small tensile strain of 0.3 & Aring;, or for A4 with small electric field of -0.3 V/& Aring;, they all hold type-II band alignment and have very high PCE and large visible light absorption, based on these results, we propose high-performance solar cell devices.
引用
收藏
页数:18
相关论文
共 50 条
  • [1] Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure
    Zhang, Siyu
    Xia, Zhengchang
    Meng, Junhua
    Cheng, Yong
    Jiang, Ji
    Yin, Zhigang
    Zhang, Xingwang
    NANO LETTERS, 2024, : 8402 - 8409
  • [2] Band alignment engineering, electronic and optical properties of Sb/PtTe2 van der Waals heterostructure: effects of electric field and biaxial strain
    Shokri, Asiye
    Yazdani, Ahmad
    JOURNAL OF MATERIALS SCIENCE, 2021, 56 (09) : 5658 - 5669
  • [3] Band alignment engineering, electronic and optical properties of Sb/PtTe2 van der Waals heterostructure: effects of electric field and biaxial strain
    Asiye Shokri
    Ahmad Yazdani
    Journal of Materials Science, 2021, 56 : 5658 - 5669
  • [4] Electronic and topological properties of the van der Waals layered superconductor PtTe
    McGuire, Michael A.
    Pai, Yun-Yi
    Brahlek, Matthew
    Okamoto, Satoshi
    Moore, R. G.
    PHYSICAL REVIEW B, 2022, 105 (18)
  • [5] Electronic and optical properties and device applications for antimonene/WS2 van der Waals heterostructure
    He, X.
    Deng, X. Q.
    Sun, L.
    Zhang, Z. H.
    Fan, Z. Q.
    APPLIED SURFACE SCIENCE, 2022, 578
  • [6] Interlayer coupling controlled electronic and magnetic properties of two-dimensional VOCl2/PtTe2 van der Waals heterostructure
    Qian, Zhonghua
    Ji, Jie
    Qian, Liyan
    Mao, Yuxuan
    Yao, Suchen
    Xu, Jingyi
    Wang, Licheng
    RSC ADVANCES, 2023, 13 (50) : 35018 - 35025
  • [7] A van der Waals Heterostructure with an Electronically Textured Moire Pattern: PtSe2/PtTe2
    Li, Jingfeng
    Ghorbani-Asl, Mahdi
    Lasek, Kinga
    Pathirage, Vimukthi
    Krasheninnikov, Arkady V.
    Batzill, Matthias
    ACS NANO, 2023, 17 (06) : 5913 - 5920
  • [8] PtTe2/WS2/Pyramidal-Si van der Waals Heterojunction with Semiconformal Interfaces toward High-Performance Photodetectors
    Zhou, Shuren
    Wen, Shaofeng
    Fan, Haodong
    Wei, Yiyang
    Yin, Yi
    Lan, Changyong
    Li, Chun
    Liu, Yong
    ACS PHOTONICS, 2024, 11 (04) : 1810 - 1820
  • [9] Van der Waals Solids: Properties and Device Applications
    Kaul, Anupama B.
    MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS VII, 2015, 9467
  • [10] The electronic and optical properties of InSe/ZnO van der Waals heterojunction:First principles study
    Mao, Jun
    Chen, Chengbing
    Long, Pan
    Liu, Shaohua
    Xiao, Jianrong
    Dai, Xueqiong
    Wang, Zhiyong
    RESULTS IN PHYSICS, 2024, 56