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Optoelectronic, thermoelectric and 3D-Elastic properties of lead-free inorganic perovskites CsInZrX6 (I, Cl and Br) for optoelectronic and thermoelectric applications
被引:0
|作者:
Harbi, A.
[1
]
Pingak, Redi Kristian
[2
]
Moutaabbid, M.
[1
]
机构:
[1] Univ Hassan II Casablanca, Fac Sci Ben MSik, Dept Chem, Lab Chem & Phys Mat LCPM, Casablanca, Morocco
[2] Univ Nusa Cendana, Fac Sci & Engn, Dept Phys, Kupang, Indonesia
关键词:
perovskites materials;
optoelectronic;
transport properties;
density functional theory;
3D-Elastic properties;
OPTICAL-PROPERTIES;
PLANE-WAVE;
SOLAR-CELLS;
EFFICIENT;
COHP;
D O I:
10.1088/1402-4896/ad5d25
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Halide perovskite materials have recently gained worldwide attention since they offer a new cost-effective way to generate renewable and green energy. In the current work, the structural, electrical, elastic, optical and thermoelectric properties of new perovskites CsInZrX6 (I, Cl and Br) were explored by density-functional theory (DFT). The results indicated that the computed lattice parameters agree really well with the current experimental and theoretical results. Moreover, the band structure profile strongly suggests that the compounds exhibit a semiconducting nature with a direct band gap. The analysis of their optical properties reveals that the perovskites possess a low reflectivity (below 23%) and a high optical absorption coefficient (10(6) cm(-1)). This is also supported by the evaluation of their calculated elastic constants and their related parameters in cubic structure which show that these compounds are brittle, mechanically stable and possess covalent bonds. On the other hand, in addition to exhibiting outstanding optoelectronic and mechanical characteristics, CsInZrCl6 also possesses dynamical stability, making it a promising candidate for application in various optoelectronic devices except for solar cells due to its relatively large bandgap. Furthermore, the BoltzTraP software was used to compute the materials' thermoelectric properties, with the computed values of the figure of merit (ZT) for CsInZrBr6, CsInZrCl6 and CsInZrI6 being 0.76, 0.73 and 0.725, respectively. This is also a strong indication that these materials are potential for thermoelectric applications.
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页数:17
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