Optimization of a near-field thermophotovoltaic system operating at low temperature and large vacuum gap

被引:47
|
作者
Lim, Mikyung [1 ]
Song, Jaeman [1 ]
Kim, Jihoon [1 ]
Lee, Seung S. [1 ]
Lee, Ikjin [1 ]
Lee, Bong Jae [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mech Engn, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
Near-field thermophotovoltaic device; Coupled surface plasmon polariton; Bulk polariton; Hyperbolic metamaterial; Multilayered graphene; Backside reflector; Optimization; RADIATIVE HEAT-TRANSFER; THERMAL-RADIATION; SURFACE-MODES; PERFORMANCE ANALYSIS; SEMICONDUCTOR; EMISSION; EMITTERS; IMPACTS; DEVICES; ENERGY;
D O I
10.1016/j.jqsrt.2018.02.006
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The present work successfully achieves a strong enhancement in performance of a near field thermophotovoltaic (TPV) system operating at low temperature and large-vacuum-gap width by introducing a hyperbolic-metamaterial (HMM) emitter, multilayered graphene, and an Au-backside reflector. Design variables for the HMM emitter and the multilayered-graphene-covered TPV cell are optimized for maximizing the power output of the near-field TPV system with the genetic algorithm. The near-field TPV system with the optimized configuration results in 24.2 times of enhancement in power output compared with that of the system with a bulk emitter and a bare TPV cell. Through the analysis of the radiative heat transfer together with surface-plasmon-polariton (SPP) dispersion curves, it is found that coupling of SPPs generated from both the HMM emitter and the multilayered-graphene-covered TPV cell plays a key role in a substantial increase in the heat transfer even at a 200-nm vacuum gap. Further, the backside reflector at the bottom of the TPV cell significantly increases not only the conversion efficiency, but also the power output by generating additional polariton modes which can be readily coupled with the existing SPPs of the HMM emitter and the multilayered-graphene-covered TPV cell. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:35 / 43
页数:9
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