A record-high EQE of 7.65%@3300 cd m-2 achieved in non-doped near-ultraviolet OLEDs based on novel D′-D-A type bipolar fluorophores upon molecular configuration engineering

被引:11
|
作者
Qi, Haoyuan [1 ]
Xie, Danyu [2 ]
Gao, Zexuan [1 ]
Wang, Shengnan [1 ]
Peng, Ling [3 ]
Liu, Yuchao [1 ]
Ying, Shian [1 ]
Ma, Dongge [2 ]
Yan, Shouke [1 ,4 ]
机构
[1] Qingdao Univ Sci & Technol, Sch Polymer Sci & Engn, Key Lab Rubber Plast, Minist Educ, Qingdao 266042, Peoples R China
[2] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, Ctr Aggregat Induced Emiss, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China
[3] Heze Univ, Coll Chem & Chem Engn, Heze 274015, Peoples R China
[4] Beijing Univ Chem Technol, Coll Mat Sci & Engn, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
基金
中国国家自然科学基金;
关键词
LIGHT-EMITTING-DIODES; DEEP-BLUE EMITTERS; CHARGE-TRANSFER; EFFICIENT; SINGLET; DESIGN;
D O I
10.1039/d4sc02655a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Developing a high-performance near-ultraviolet (NUV) material and its simple non-doped device with a small efficiency roll-off and good color purity is a promising but challenging task. Here, we proposed a novel donor '-donor-acceptor (D '-D-A) type molecular strategy to largely solve the intrinsic contradictions among wide-bandgap NUV emission, fluorescence efficiency, carrier injection and transport. An efficient NUV fluorophore, 3,6-mPPICNC3, exhibiting a hybridized local and charge-transfer state, is achieved through precise molecular configuration engineering, realizing similar hole and electron mobilities at both low and high electric fields. Moreover, the planarized intramolecular charge transfer excited state and steric hindrance effect endow 3,6-mPPICNC3 with a considerable luminous efficiency and good color purity in the aggregation state. Consequently, the non-doped device emitting stable NUV light with Commission Internationale de l'Eclairage (CIE) coordinates of (0.160, 0.032) and a narrow full width at half maximum of 44 nm exhibits a state-of-the-art external quantum efficiency (EQE) of 7.67% and negligible efficiency roll-off over a luminance range from 0 to 3300 cd m(-2). This is a record-high efficiency among all the reported non-doped NUV devices. Amazingly, an EQE of 7.85% and CIE coordinates of (0.161, 0.025) are achieved in the doped device. This demonstrates that the D '-D-A-type molecular structure has great potential for developing high-performance organic light-emitting materials and their optoelectronic applications.
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页码:11053 / 11064
页数:12
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