Optically Gated Electrostatic Field-Effect Thermal Transistor

被引:0
|
作者
Huang, Shouyuan [1 ,2 ]
Ghosh, Neil [1 ,2 ]
Niu, Chang [2 ,3 ]
Chen, Yong P. [4 ,5 ]
Ye, Peide D. [4 ,5 ]
Xu, Xianfan [1 ,2 ,3 ]
机构
[1] Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Purdue Univ, Elmore Family Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Birck Nanotechnol Ctr, Elmore Family Sch Elect & Comp Engn, Dept Phys & Astron, W Lafayette, IN 47907 USA
[5] Purdue Univ, Purdue Quantum Sci & Engn Inst, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
thermal transistor; thermalswitch; electrostaticgating; topological insulator; CONDUCTIVITY; FILMS;
D O I
10.1021/acs.nanolett.3c05085
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Dynamic tuning of thermal transport in solids is scientifically intriguing with wide applications for thermal transport control in electronic devices. In this work, we demonstrate a thermal transistor, a device in which heat flow can be regulated using external control, realized in a topological insulator (TI) through the topological surface states. The tuning of thermal transport is achieved by using optical gating of a thin dielectric layer deposited on the TI film. The gate-dependent thermal conductivity is measured using micro-Raman thermometry. The transistor has a large ON/OFF ratio of 2.8 at room temperature and can be continuously and repetitively switched in tens of seconds by optical gating and potentially much faster by electrical gating. Such thermal transistors with a large ON/OFF ratio and fast switching times offer the possibilities of smart thermal devices for active thermal management and control in future electronic systems.
引用
收藏
页码:5139 / 5145
页数:7
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