4 × 112 Gb/s hybrid integrated silicon receiver based on photonic-electronic co-design

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作者
金烨 [1 ,2 ,3 ]
谢毓俊 [1 ,2 ,3 ]
张郅涵 [2 ,4 ,5 ]
陆东来 [2 ,4 ]
杨梦涵 [1 ,2 ,3 ]
李昂 [1 ,2 ,3 ]
孟祥彦 [1 ,2 ,3 ]
屈扬 [1 ,2 ,3 ]
李乐良 [2 ,4 ]
石暖暖 [1 ,2 ,3 ]
李伟 [1 ,2 ,3 ]
祝宁华 [1 ,2 ,3 ]
祁楠 [2 ,4 ]
李明 [1 ,2 ,3 ]
机构
[1] Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences
[2] Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences
[3] School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences
[4] Institute of Semiconductors,Chinese Academy of Sciences
[5] Peng Cheng
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摘要
A 4×112 Gb/s hybrid-integrated optical receiver is demonstrated based on the silicon-photonic vertical p-i-n photodetector and silicon–germanium transimpedance amplifier.We propose a photonic-electronic co-design technique to optimize both the device-level and system-level performance,based on the end-to-end equivalent circuit model of the receiver.Continuous-time linear equalization and shunt peaking are employed to enhance the frequency response.Experimental results reveal that the optical-to-electrical 3-dB bandwidth of the receiver is 48 GHz.Clear open NRZ eye diagrams at56 Gb/s and PAM-4 eye diagrams at 112 Gb/s are achieved without an equalizer in the oscilloscope.The measured bit error rates for 56 Gb/s in NRZ and 112 Gb/s in PAM-4 reach 1×10-12and 2.4×10-4(KP4-FEC:forward error correction) thresholds under-4 dBm input power,respectively.Furthermore,the proposed receiver boasts a power consumption of approximately2.2 pJ/bit,indicating an energy efficient solution for data center traffic growth.
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页码:111 / 117
页数:7
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