Low Operating Voltage IGZO Thin-film Transistor Based on Ultrathin Al2O3 Gate Insulator and Its Application in Common-source Amplifier

被引：0

作者：

Zhang H. ^{[1
]}

Li J. ^{[1
]}

Zhao T.-T. ^{[1
]}

Guo A.-Y. ^{[1
]}

Li T.-K. ^{[1
]}

Mao S.-S. ^{[1
]}

Yuan L. ^{[1
]}

Zhang J.-H. ^{[1
]}

机构：

[1] School of Mechanical Engineering and Automation, Shanghai University, Shanghai

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2020年 / 41卷 / 04期

关键词：

A-IGZO TFT; Al[!sub]2[!/sub]O[!sub]3[!/sub] gate insulator; ALD; Common-source amplifier;

D O I：

10.3788/fgxb20204104.0451

中图分类号：

学科分类号：

摘要：

With the wide application of thin-film transistor (TFT) in various emerging electronic products, as a key component of various electronic equipment, its operating voltage and stability are facing great challenges. In order to meet the needs of highly integrated and complex applications in the future, it is very important to realize its low operating voltage and high stability. Bottom gate top-contact a-IGZO TFT on large area glass substrate of 150 mm×150 mm was prepared by using magnetron sputtering to investigate the effect of 50, 40, 30 and 20 nm Al2O3 thickness on the performance of a-IGZO TFTs. The results show that TFT with 20 nm-thick-Al2O3 gate insulator exhibits the best electrical comprehensive performance: low operating voltage of 1 V, threshold voltage of nearly 0 V and subthreshold swing of only 65.21 mV/dec. It also has a high field-effect mobility of 15.52 cm2/(V•s) and a high ION/IOFF ratio of 5.85×107. At the same time, the device also shows excellent stability: the minimum threshold voltage shift after 1 h of gate ±5 V bias is only 0.09 V and excellent stability of uniform distribution over a large area of 150 mm×150 mm. The low operating voltage and high stability of TFT devices are realized. Finally, a common-source amplifier is designed with this TFT device, and a gain of 14 dB is obtained. © 2020, Science Press. All right reserved.

引用

页码：451 / 460

页数：9

共 34 条

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