Coexistence of analog and digital memristive behaviors in MoO3 based devices for artificial synaptic and logic display applications

In-memory logic operations and neuromorphic computing inspired by the brain based on memristors are promising computing modes that can improve computational efficiency and avoid additional power consumption. However, implementing these two functions within the memristor same cell is often limited by the flexible conversion between digital and analog memristive behaviors. In this work, a memristive device with Ag/MoO3/ Ti structure was developed using hydrothermal methods, which presents the evolution from capacitance-coupled memristive effect to self-rectifying non-zero crossing analog memristive behavior and then to digital memristive effect by adjusting the amplitude of applied voltage. Under low voltage region (Vamplitude <= 1.2 V), the non-zero crossing analog memristive effect with self-rectifying behavior is mainly attributed to the potential barrier at the interface and built-in electric field, while the digital memristive effect under high voltage region (Vamplitude >= 1.5 V) is mainly attributed to the formation and fracture of Ag conductive filaments (CFs). Moreover, the mechanism for the non-zero-crossing characteristic of device was proven by parallel connection of memristors and capacitors. Finally, the artificial synaptic and logic display functions were implemented using the as-prepared memristive unit. Therefore, this work provided guidance for understanding the non-zero-crossing memristive effect and the development of high-density multifunctional devices.