Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

A technology was developed for activating ion-implanted dopants in silicon-on-insulator layers at a low annealing temperature (600 degrees C) using the pre-amorphization technique of a silicon device layer. In the case of phosphorus implantation, silicon was amorphized directly by dopant ions. In the case of boron implantation for pre-amorphization, the layers were preliminary irradiated with argon or fluorine ions. Complex diagnostics of the implanted layers was carried out using secondary ion mass spectrometry, X-ray diffractometry, and small-angle X-ray reflectometry. The combination of methods made it possible to characterize the impurity distribution, the degree of silicon crystallinity, the layer thicknesses, and the interface widths in structures. The results of diagnostics of the structure and composition correlate well with calculations in the SRIM software package and the electrophysical characteristics of the layers after annealing. It was shown that the use of argon for pre-amorphization of silicon interfered with the recrystallization process and did not make it possible to achieve acceptable electrical characteristics of the doped layer. Amorphization with phosphorus and pre-amorphization with fluorine during boron implantation allowed obtaining the required values of the resistance of the doped layers after annealing at a temperature of 600 degrees C. The use of a complex approach rendered it possible to optimize the modes of amorphization, ion doping, and annealing of silicon-on-insulator structures at low temperatures necessary for the creation of light-emitting device structures based on silicon-germanium nanoislands.