An Experimental Investigation of Laser Assisted Waterjet Microgrooving of GaAs Wafers

被引：0
|
作者：
Duan L. [1 ,3 ]
Huang C. [1 ,2 ]
Liu D. [1 ]
Yao P. [1 ]
Liu H. [1 ]
机构：
[1] School of Mechanical Engineering, Shandong University, Jinan
[2] School of Mechanical Engineering, Yanshan University, Hebei, Qinhuangdao
[3] Shanghai Aerospace Equipments Manufacturer Co.,Ltd., Shanghai
来源：
Zhongguo Jixie Gongcheng/China Mechanical Engineering | 2023年 / 34卷 / 10期
关键词：
gallium arsenide(GaAs) wafer; laser assisted waterjet; microgroovc; processing parameter;
D O I：
10.3969/j.issn.1004-132X.2023.10.006
中图分类号：
学科分类号：
摘要：
Comparative experiments of dry laser, low-pressure waterjet assisted laser and laser assisted waterjet processing microgrooves of GaAs wafers were conducted. The results show that laser assisted waterjet processing is suitable for processing GaAs materials, which may process high quality microgrooves without contamination on the wafer surfaces, large depth, small heat affected zone width and large depth to width ratio. And the micromorphologics of the machined surfaces arc uniform with few microcracks, which are better than the other two methods. The cutting performance of laser assisted waterjet microgrooving of GaAs wafers was studied experimentally. The results show that the processing factorsGaser pulse energy, waterjet pressure, processing speed, waterjet inclination angle, focal plane position, and processing times) have significant influences on microgroovc depth, micro-groove width and material removal rate. The microgroove depth, microgroovc width and material removal rate increase with increasing laser pulse energy, decrease with increasing waterjet pressure, and the material removal rate increases significantly with increasing processing speed. © 2023 China Mechanical Engineering Magazine Office. All rights reserved.
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页码：1172 / 1183
页数：11
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