Emerging Application of High-Entropy MXene in Efficient Photoelectrochemical-Type Photodetectors and Wideband Mode Lockers

被引:3
|
作者
Gao, Xiaomeng [1 ,2 ]
Zhang, Shoukai [1 ,2 ]
Zhang, Jian [3 ]
Wei, Songrui [1 ,2 ]
Chen, Yimiao [1 ,2 ]
Zhang, Yule [1 ,2 ]
Zheng, Wenchen [1 ,2 ]
Huang, Ziheng [1 ,2 ]
Du, Bowen [1 ,2 ]
Xie, Zhongjian [4 ]
Wang, Bing [1 ,2 ]
Lin, Jahon [2 ,5 ]
Liu, Jun [1 ]
Ge, Yanqi [1 ,2 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Int Collaborat Lab 2D Mat Optoelect Sci & Technol, Shenzhen 518060, Peoples R China
[3] Suzhou Univ Sci & Technol, Inst Mat Sci & Devices, Sch Mat Sci & Engn, Suzhou 215009, Peoples R China
[4] Southern Univ Sci & Technol, Shenzhen Childrens Hosp, Clin Med Coll, Shenzhen 518038, Guangdong, Peoples R China
[5] Natl Taipei Univ Technol, Dept Electroopt Engn, Adv Nanophoton Technol Lab, Taipei 10608, Taiwan
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
density functional theory calculations; high-entropy MXene; mode-locker; photodetector; OPTICAL NONLINEARITIES; TRANSITION; GRAPHENE;
D O I
10.1002/lpor.202400082
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
High-entropy (HE) MXenes represent a novel class of 2D materials within the MXene family, which are drawing widespread attention because of their diverse compositions and robust physicochemical properties. However, the exploration of HE-MXenes in optoelectronic domains is relatively limited. This study unveils the rapid photoresponse and superior nonlinear optical (NLO) characteristics of HE-MXene TiVCrMoC3Tx nanosheets (NSs) through comparison with ordinary MXene Ti3C2Tx NSs. Transient absorption spectroscopy reveals that the few-layer TiVCrMoC3Tx NSs excel in photoelectrochemical-type photodetectors with swift response properties. Additionally, the advantage of HE structures is further validated by NLO measurement system, which show that few-layer TiVCrMoC3Tx NSs exhibit stronger saturable absorption than Ti3C2Tx NSs. First-principles calculations based on the special quasi-random structure method reveal that the transition behavior of HE-MXene is similar to that of a semiconductor with direct bandgap, and this is ascribed to the main reason of strong photoelectric response. Taking advantage of the NLO properties of the TiVCrMoC3Tx NSs, all-optical devices based on these NSs are applied to mode-locked fiber lasers at 1, 1.5, and 2 mu m wavebands, respectively. This investigation provides meaningful guidance for the future design and application of HE-MXenes in high-performance optoelectronic devices. This study reveals the excellent nonlinear optical properties of high-entropy MXene TiVCrMoC3Tx nanosheets in nonlinear optical measurement systems and the fast optical response as photoelectrochemical-based photodetectors by comparing with the ordinary MXene Ti3C2Tx nanosheets and demonstrates it by first-principles calculations. In addition, all-optical devices based on TiVCrMoC3Tx nanosheets are designed and applied to mode-locked fiber lasers at 1, 1.5, and 2 mu m bands, respectively. image
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页数:12
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