On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

被引：1
|
作者：
Yuan, Peng [1 ]
Chen, Yuting [1 ]
Chai, Liguo [1 ]
Jiao, Zhengying [1 ]
Luan, Qingjie [1 ]
Shen, Yongqing [1 ]
Zhang, Ying [1 ]
Leng, Jibin [1 ]
Ma, Xueli [1 ]
Xiang, Jinjuan [1 ]
Wang, Guilei [1 ]
Zhao, Chao [1 ]
机构：
[1] Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 04期
基金：
国家重点研发计划;
关键词：
FeRAM; HZO; imprint; reliability;
D O I：
10.1088/1674-4926/45/4/042301
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO2. In this work, we present results of a comprehensive reliability evaluation of Hf0.5Zr0.5O2-based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.
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页数：6
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