Voltage Balancing Circuit for Series-connected IGBTs Based on Multi-level Clamp Topology and Gate Drive Signal Adjustment

被引:0
|
作者
Zhou, Ye [1 ]
Wang, Xu [1 ]
Xian, Liang [2 ]
Yang, Dan [1 ]
Shi, Xiaoyan [1 ]
机构
[1] School of Information Science & Engineering, Northeastern University, Shenyang,Liaoning Province,110819, China
[2] Experimental Power Grid Centre, A*STAR Research Entities, Singapore,627590, Singapore
关键词
Insulated gate bipolar transistors (IGBT);
D O I
10.13334/j.0258-8013.pcsee.190641
中图分类号
学科分类号
摘要
The top priority in guaranteeing the operation safety and reliability of a series-connected IGBTs-based system is to balance the collector-to-emitter voltage of individual IGBT when turned-off. Based on the multi-level voltage clamp topology, this paper proposed a novel voltage balancing circuit which takes effect on both load and gate sides simultaneously. It is achieved by phase-by-phase suppressing the collector-to- emitter voltage build-up rate of the firstly-turned-off IGBT. Furthermore, the dynamic and static voltage discrepancy was minimized by employing the static voltage balancing and voltage state feedback sub-circuit. The microcontroller is able to adjust the turn-off time of the IGBTs in real-time according to the feedback signals of the IGBTs' collector-to-emitter voltage states captured and sent by this sub-circuit. The circuit's topology, operating principle, and design procedure were given. Experimental results validate the proposed circuit and its control strategy exhibit an effective enhancement to the voltage consistency among series-connected IGBTs without decelerating the turned-off speed. © 2020 Chin. Soc. for Elec. Eng.
引用
收藏
页码:4277 / 4289
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