Quantum-dot Light-emitting Diodes Based on Inorganic Charge-generation Layer

被引：0
|
作者：
Zhan S. [1 ]
Liu J.-T. [1 ]
Zhang H.-Z. [1 ]
Ji W.-Y. [1 ]
机构：
[1] College of Physics, Jilin University, Changchun
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2022年 / 43卷 / 10期
基金：
中国国家自然科学基金;
关键词：
charge storage; charge-generation layer; overshoot; quantum-dot light-emitting diodes;
D O I：
10.37188/CJL.20220240
中图分类号：
学科分类号：
摘要：
Quantum-dot light-emitting diodes（QLEDs）are fabricated by employing an inorganic charge-generation layer（CGL） consisting of WO3/ZnO instead of commonly used ZnO electron-transport layer. The performance of CGL based QLED is increased by around 30% compared with the device with ZnO as the electron-transport layer， which is attributed to the electrical field-dependent charge injection of CGL， resulting in more balanced charge injection and efficient exciton formation. Moreover， the emission quenching processes induced by charges are also reduced. The working mechanism of CGL based QLEDs is unraveled by transient electroluminescence spectrum and capacitance measurements. We find that the CGL can act as a charge reservoir， which is the origin of electroluminescence overshoot at the rising edge of transient electroluminescence response. Additionally， the shelf lifetime of CGL-QLEDs is identical with or even better than the normal ZnO based devices. Considering the charge injection of CGL is independent on the work function of electrodes， we believe the device structure proposed in this work has great potential to improve device stability and yield. © 2022 Chines Academy of Sciences. All rights reserved.
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页码：1469 / 1477
页数：8
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