Two-dimensional/one-dimensional SnSe2/CNT heterostructure as a photo-detector and its improved photo-responsiveness

The present study reports the fabrication of a resistive device using SnSe2/CNT nanohybrids with improved photo-responsiveness. The sono-chemical exfoliation method has been used to synthesize SnSe2 nanosheets. The SnSe2/CNT nanohybrid is prepared in the 70-30 weight (%) by a simple mixing-stirring process. The prepared nanocomposite is deposited on ITO/glass substrate and exploited for photo-detection application. SnSe2/CNT photo-detector is studied under polychromatic white light illumination with varying power intensity under atmospheric conditions and in vacuum. The photo-detector shows excellent responsivity of 0.81 A/W for white light illumination with fast switching of nearly 0.7 ms. Low-temperature stability has also been studied for the temperature range 300-200 K for 760-nm laser light illumination. The responsivity of 0.52 A/W is obtained at 300 K for laser illumination. The detector gives significantly good stability and photocurrent even at 200 K. The durability test of the photo-detector is studied for > 125 on-off cycles under 80 mW/cm(2) polychromatic radiation. Detector exhibits excellent photo-response at different atmospheric conditions as well as temperature. As high-performance optoelectronics, the application of SnSe2/CNT-based photo-detector opens a new pathway in the application of 2D-1D heterostructure.