Simulation and Experiment of Metal-Doped AgSnO2 Contact Material

被引：0

作者：

Zhang Y. ^{[1
]}

Wang J. ^{[1
]}

Kang H. ^{[1
]}

Hu D. ^{[2
]}

机构：

[1] State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin

[2] Suzhou Electrical Apparatus Science Academy Co. Ltd, Suzhou

来源：

Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2021年 / 36卷 / 08期

关键词：

AgSnO[!sub]2[!/sub] contact materials; Electrical properties; First-principles; Metal-doped;

D O I：

10.19595/j.cnki.1000-6753.tces.200900

中图分类号：

学科分类号：

摘要：

Doping to improve the electrical properties of AgSnO2 contact materials has always adopted the trial and error method for experimental research. Therefore, it is of great significance and application value to seek effective theoretical method. In this paper, based on the first-principles of density functional theory, the SnO2 model doped with three metal elements (Sr, Ga, Co) was constructed. The stability and relative conductivity of doped SnO2 were studied by simulation, and the best doping element Co was obtained. After that, it was verified through experiments. First, the sol-gel method was used to prepare the doped SnO2 powder, and the XRD verified that the sol-gel method could realize the atomic replacement of model established by the simulation. Then, the doped SnO2 powder was prepared by the powder metallurgy method. The electrical properties were measured to verify the correctness of the simulation. It provides a theoretical basis for screening elements to improve the performance of AgSnO2 contact materials. © 2021, Electrical Technology Press Co. Ltd. All right reserved.

引用

页码：1587 / 1595

页数：8

共 30 条

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