Investigation of temporal response characteristics in silicon carbide detector

被引：0
|
作者：
Liu L. [1 ]
Zhang J. [1 ]
Li H. [1 ]
Ouyang X. [1 ]
机构：
[1] State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi′an
来源：
Harbin Gongcheng Daxue Xuebao/Journal of Harbin Engineering University | 2022年 / 43卷 / 11期
关键词：
current mode detector; nanosecond; semiconductor detector; silicon carbide; temporal response; wide bandgap semiconductor;
D O I：
10.11990/jheu.202206023
中图分类号：
学科分类号：
摘要：
Silicon carbide detector is a kind of new semiconductor detector emerging in recent years, with high efficiency of charge collection and strong radiation resistance, becoming an ideal choice for the detection of neutron and charged particles. Temporal response characteristics of the current mode silicon carbide detector are investigated in this paper. The theoretical calculation of the WC Dickinson model and the experiment of ultrafast beam response with equivalent δ pulse are used to investigate temporal response characteristics of silicon carbide detector, obtaining consistent theoretical calculation and experiment results. The findings revealed that the silicon carbide detector has an ultrafast time response, with a rising time and response full width at half maximum of less than 2 ns. The sensitive size effect of the time response of the silicon carbide detector is studied, deriving the empirical formula of relationship between the falling time and RC time parameter of the detector. The study can provide a reference for the design of silicon carbide detectors and their application in pulsed ray detection. © 2022 Editorial Board of Journal of Harbin Engineering. All rights reserved.
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页码：1547 / 1552
页数：5
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