180°Switching Method Based on Transformer for CMOS Phase Shifter

被引:0
|
作者
Kim, Joon-Hyung [1 ]
Choi, Han-Woong [1 ]
Baek, Min-Seok [1 ]
Kim, Choul-Young [1 ]
机构
[1] Chungnam Natl Univ, Semicond Circuit Design Lab, Daejeon 34134, South Korea
来源
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 06期
基金
新加坡国家研究基金会;
关键词
Gain; Baluns; Germanium; Q-factor; Phase transformers; Transistors; Couplings; Complementary metal-oxide-semiconductor (CMOS); fifth generation (5G); millimeter wave (mm-Wave); phase shifter (PS); phased array system;
D O I
10.1109/LMWT.2024.3392986
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel 180 (degrees) switching method based on transformer for phase shifter (PS) is proposed. The proposed method provides low phase error (PE) and low gain error, which enhances the overall performance of the PS. To demonstrate the feasibility of the proposed circuit configuration, the PS is implemented using a 65-nm bulk complementary metal-oxide-semiconductor (CMOS) process. Using the proposed 180(degrees) -unit structure, a fully integrated PS with a resolution of 6 bits shows the rms PE of 2.4 (degrees) -3.0 (degrees) and the rms gain error of 0.8-1.0 dB with <-10 dB of input and output return loss ( S-11 , S-22 ). The measured insertion loss is 9.3 dB at 24 GHz. The power dissipation of PS is zero and the core size is 0.18 mm(2) .
引用
收藏
页码:631 / 634
页数:4
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