Multi-Rate Electro-Thermal Simulation Method for High Power IGBT Based on Field-Circuit Coupling

被引：0
|
作者：
Jia Y. [1 ]
Xiao F. [1 ]
Luo Y. [1 ]
Liu B. [1 ]
Huang Y. [1 ]
机构：
[1] National key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2020年 / 35卷 / 09期
关键词：
Co-simulation; Extreme condition; Field-circuit coupling; Insulated gate bipolar transistor (IGBT); Self-heating;
D O I：
10.19595/j.cnki.1000-6753.tces.190350
中图分类号：
学科分类号：
摘要：
The self-heating of IGBT module is obvious in some non-periodic overload extreme conditions, such as short-circuit. Due to the impact of external loads such as high voltage and high current, the temperature of IGBT module will rise rapidly in a short time, which will affect the semiconductor characteristics of IGBT chips and the material characteristics of the packaging structure. The final manifestation is the change of electrical behaviors of IGBT module power terminals. In this case, it is necessary to pay attention to the electrical and temperature distribution characteristics of IGBT module at the same time. However, the difference in time scale between electrical and thermal problems brings inconvenience to the electro-thermal coupling simulation. Therefore, an electro- thermal co-simulation method based on field-circuit coupling is proposed in this paper. Firstly, the co-simulation principle is analyzed. Then, a circuit model based on IGBT physical model and a FEM-based thermal model are constructed in Simulink and COMSOL respectively, and the co-simulation under the multi-rate simulation strategy is realized through a control file of Matlab script. Finally, the proposed method is verified by switch transient test and short-circuit test on an ABB 3.3kV/1 500A high power IGBT module. © 2020, Electrical Technology Press Co. Ltd. All right reserved.
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页码：1952 / 1961
页数：9
相关论文
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