Threshold Voltage Shift of SiC MOSFETs Induced by High Temperature Gate Bias and Total Ionizing Dose

被引：0

作者：

Yu, Qingkui ^{[1
]}

Sun, Yi ^{[1
]}

Cao, Shuang ^{[1
]}

Wang, He ^{[1
]}

Lv, He ^{[1
]}

Mei, Bo ^{[1
]}

Zhang, Chenrui ^{[1
]}

机构：

[1] China Acad Space Technol, Natl Innovat Ctr Radiat Applicat, Beijing 100029, Peoples R China

来源：

2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS | 2022年

基金：

中国国家自然科学基金;

关键词：

MOSFETs; SiC; total ionizing dose effect; HTGB; INSTABILITY;

D O I：

10.1109/RADECS55911.2022.10412513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To study whether the threshold voltage shifts of SiC MOSFETs caused by high temperature gate bias (HTGB) were affected by total ionizing dose (TID) irradiation and vice versa, the threshold voltage shifts of Silicon Carbide (SiC) Metal Oxide Semiconductor Filed Effect Transistors (MOSFETs) induced by HTGB and TID were tested. HTGB caused positive shift under positive gate bias, and negative shift under negative gate bias. The threshold voltage shift post-irradiation were mainly controlled by the radiation-induced oxide trapped charges. The conclusion was that the near-interface traps (NITs) and the radiation-induced oxide trapped charges were independent of each other and may cause threshold voltage shift independently or together. The threshold voltage shifts were the function of TID, gate bias and temperature.

引用

页码：95 / 99

页数：5

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