Research of Al2O3/sioxny/sinx laminated structure on efficiency and LID of PERC solar cells

被引:0
|
作者
Fan J. [1 ,2 ]
Chen D. [2 ]
Xu L. [1 ]
Yang Y. [1 ]
Zhou H. [1 ]
机构
[1] College of Mechanical and Elctronic Engineering, Nanjing Forestry University, Nanjing
[2] State Key Laboratory of PV Science and Technology, Trina Solar Co. Ltd., Changzhou
来源
关键词
Field passivation; Laminated film; LID; PERC solar cells; Rear passivation; SiO[!sub]x[!/sub]N[!sub]y[!/sub;
D O I
10.19912/j.0254-0096.tynxb.2020-1145
中图分类号
学科分类号
摘要
Due to a large number of H atoms, the SiOxNy film prepared by PECVD has shown excellent surface passivation performance. By inserting a layer of SiOxNy film between the Al2O3/SiNx rear passivation structure of PERC solar cells, Al2O3/SiOxNy/SiNx is formed, which can avoid the negative effect of the fixed positive charge carried by SiNx on the negative charge field passivation effect of Al2O3. As a result, the silicon minority carrier lifetime increased from 130 μs to 162 μs, and the cell conversion efficiency increased by 0.09%. The LID of the PERC cell based on Al2O3/SiOxNy/SiNx rear passivation structure was also improved, decreasing from 1.83% in the control group to 1.09% in the experimental group. © 2022, Solar Energy Periodical Office Co., Ltd. All right reserved.
引用
收藏
页码:122 / 127
页数:5
相关论文
共 13 条
  • [1] CONIBEER G., Third-generation photovoltaics, Materials today, 10, 11, pp. 42-50, (2007)
  • [2] ALAYO M I, PEREYRA I, SCOPEL W L, Et al., On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition(PECVD)SiO<sub>x</sub>N<sub>y</sub> films, Thin solid films, 402, 1-2, pp. 154-161, (2002)
  • [3] DAUWE S, MITTELSTADT L, METZ A, Et al., Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells, Progress in photovoltaics: research and applications, 10, 4, pp. 271-278, (2002)
  • [4] GRONER M D, FABREGUETTE F H, ELAM J W, Et al., Low-temperature Al<sub>2</sub>O<sub>3</sub> atomic layer deposition, Chemistry of materials, 16, 4, pp. 639-645, (2004)
  • [5] AGOSTINELLI G, DELABIE A, VITANOV P, Et al., Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge, Solar energy materials and solar cells, 90, 18-19, pp. 3438-3443, (2006)
  • [6] LIANG W, WEBER K J, THOMSON A F., Effective SiN<sub>x</sub>: H capping layers on 1-nm Al<sub>2</sub>O<sub>3</sub> for p<sup>+</sup> surface passivation, IEEE journal of photovoltaics, 4, 6, pp. 1405-1412, (2014)
  • [7] TOMPKINS H, IRENE E A., Handbook of ellipsometry, (2005)
  • [8] ZHANG X Z., Electron microscopic analysis, (2006)
  • [9] SINTON R A, CUEVAS A, STUCKINGS M., Quasi-steadystate photoconductance, a new method for solar cell material and device characterization, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, pp. 457-460, (1996)
  • [10] DUPUIS J, FOURMOND E, LELIEVRE J F, Et al., Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation, Thin solid films, 516, 20, pp. 6954-6958, (2008)