共 13 条
- [1] CONIBEER G., Third-generation photovoltaics, Materials today, 10, 11, pp. 42-50, (2007)
- [2] ALAYO M I, PEREYRA I, SCOPEL W L, Et al., On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition(PECVD)SiO<sub>x</sub>N<sub>y</sub> films, Thin solid films, 402, 1-2, pp. 154-161, (2002)
- [3] DAUWE S, MITTELSTADT L, METZ A, Et al., Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells, Progress in photovoltaics: research and applications, 10, 4, pp. 271-278, (2002)
- [4] GRONER M D, FABREGUETTE F H, ELAM J W, Et al., Low-temperature Al<sub>2</sub>O<sub>3</sub> atomic layer deposition, Chemistry of materials, 16, 4, pp. 639-645, (2004)
- [5] AGOSTINELLI G, DELABIE A, VITANOV P, Et al., Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge, Solar energy materials and solar cells, 90, 18-19, pp. 3438-3443, (2006)
- [6] LIANG W, WEBER K J, THOMSON A F., Effective SiN<sub>x</sub>: H capping layers on 1-nm Al<sub>2</sub>O<sub>3</sub> for p<sup>+</sup> surface passivation, IEEE journal of photovoltaics, 4, 6, pp. 1405-1412, (2014)
- [7] TOMPKINS H, IRENE E A., Handbook of ellipsometry, (2005)
- [8] ZHANG X Z., Electron microscopic analysis, (2006)
- [9] SINTON R A, CUEVAS A, STUCKINGS M., Quasi-steadystate photoconductance, a new method for solar cell material and device characterization, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, pp. 457-460, (1996)
- [10] DUPUIS J, FOURMOND E, LELIEVRE J F, Et al., Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation, Thin solid films, 516, 20, pp. 6954-6958, (2008)