On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude

被引：0
|
作者：
Mehedi, Mehzabeen [1 ]
Tok, Kean Hong [1 ]
Ye, Zengliang [1 ]
Zhang, Jian Fu [1 ]
Ji, Zhigang [1 ,2 ]
Zhang, Weidong [1 ]
Marsland, John S. [1 ]
机构：
[1] School of Engineering, Liverpool John Moores University, Liverpool, United Kingdom
[2] School of Microelectronics, Shanghai Jiaotong University, Shanghai,200240, China
来源：
IEEE Access | 2021年 / 9卷
基金：
英国工程与自然科学研究理事会;
关键词：
Integrated circuit manufacture - Jitter - Codes (symbols) - Telegraph - Low power electronics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：43551 / 43561
相关论文
共 50 条
  • [1] On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude
    Mehedi, Mehzabeen
    Tok, Kean Hong
    Ye, Zengliang
    Zhang, Jian Fu
    Ji, Zhigang
    Zhang, Weidong
    Marsland, John S.
    [J]. IEEE ACCESS, 2021, 9 : 43551 - 43561
  • [2] On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: From Ideal to Statistical Devices
    Zhang, Zexuan
    Guo, Shaofeng
    Zhang, Zhe
    Wang, Runsheng
    Huang, Ru
    [J]. 2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2017,
  • [3] An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants
    Mehedi, Mehzabeen
    Tok, Kean Hong
    Zhang, Jian Fu
    Ji, Zhigang
    Ye, Zengliang
    Zhang, Weidong
    Marsland, John S.
    [J]. IEEE ACCESS, 2020, 8 : 182273 - 182282
  • [4] The Amplitude of Random Telegraph Noise: Scaling Implications
    Cheung, Kin P.
    Campbell, J. P.
    Potbhare, S.
    Oates, A.
    [J]. 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
  • [5] Investigation on the Amplitude Distribution of Random Telegraph Noise (RTN) in Nanoscale MOS Devices
    Zhang, Zexuan
    Guo, Shaofeng
    Jiang, Xiaobo
    Wang, Runsheng
    Huang, Ru
    Zou, Jibin
    [J]. 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [6] Statistical Analysis and Modeling of Random Telegraph Noise Based on Gate Delay Measurement
    Islam, A. K. M. Mahfuzul
    Nakai, Tatsuya
    Onodera, Hidetoshi
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2017, 30 (03) : 216 - 226
  • [7] Statistical Analysis and Modeling of Random Telegraph Noise Based on Gate Delay Variation Measurement
    Islam, A. K. M. Mahfuzul
    Nakai, Tatsuya
    Onodera, Hidetoshi
    [J]. 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, : 82 - 87
  • [8] Statistical Analysis of Random Telegraph Noise in Digital Circuits
    Chen, Xiaoming
    Wang, Yu
    Cao, Yu
    Yang, Huazhong
    [J]. 2014 19TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC), 2014, : 161 - 166
  • [9] Statistical model for random telegraph noise in Flash memories
    Compagnoni, Christian Monzio
    Gustneroli, Riccardo
    Spinelli, Alessandro S.
    Lacaita, Andrea L.
    Bonanomi, Mauro
    Visconti, Angelo
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) : 388 - 395
  • [10] New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs
    Chen, Cheng
    Huang, Qianqian
    Zhu, Jiadi
    Zhao, Yang
    Guo, Lingyi
    Huang, Ru
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3324 - 3330
12345