Intrinsically stretchable organic field-effect transistors: progress and challenges

As one of the basic components of stretchable electronics, intrinsically stretchable organic field-effect transistors (OFETs) employ a stretchable material for each component layer and hence present outstanding advantages of good mechanical properties, solution-processable preparation, and biocompatibility, attracting much attention from researchers. Herein, we summarize and review the development status of intrinsically stretchable OFETs. The stretchable semiconductors, stretchable electrodes, and stretchable insulating layers currently used to prepare intrinsically stretchable OFETs are introduced in detail. Furthermore, the overall device preparation processes are discussed. In addition, the applications of intrinsically stretchable OFETs, such as gas sensors, temperature sensors, and memristors, are also introduced. Finally, challenges and prospective developments in intrinsically stretchable OFETs are discussed. This paper introduces the materials, preparation, and applications of intrinsically stretchable organic field-effect transistors and discusses the challenges and advancements in their development.