Improved polarization by interface layer insertion in ferroelectric HfO2-based MFM capacitors

被引：1

作者：

Suenbuel, Ayse ^{[1
]}

Lehninger, David ^{[1
]}

Lederer, Maximilian ^{[1
]}

Kaempfe, Thomas ^{[1
]}

Seidel, Konrad ^{[1
]}

Eng, Lukas M. ^{[2
]}

机构：

[1] Fraunhofer Inst Photon Microsyst IPMS, Ctr Nanoelect Technol CNT, D-01109 Dresden, Germany

[2] Tech Univ Dresden, Inst Angew Phys, D-01187 Dresden, Germany

来源：

2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF | 2023年

关键词：

ferroelectric; hafnium oxide; interface layer;

D O I：

10.1109/ISAF53668.2023.10265559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hafnium zirconium oxide (HZO) is a promising material for ferroelectric non-volatile memory devices as it has low crystalline temperatures and hence is back-end-of-line compatible, is complementary metal-oxide-semiconductor technology compatible (CMOS) as well as offers thickness scalability advantages. Here, we study the insertion of the SiO2 and Al2O3 interface layers in ferroelectric HZO-based MFM capacitors in terms of ferroelectric behavior. By using such interface layers, an outstanding 2P(r) value of around 60 mu C/cm(2) can be achieved.

引用

页数：4

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