High-voltage and High-power Modular Multilevel Converter Based on Integrated Gate Commutated Thyristor

被引：0
|
作者：
Zhao, Biao [1 ]
Wei, Tianyu [1 ]
Xu, Chaoqun [1 ]
Chen, Zhengyu [1 ]
Liu, Jiapeng [1 ]
Zhou, Wenpeng [1 ]
Song, Qiang [1 ]
Yu, Zhanqing [1 ]
Zeng, Rong [1 ]
机构：
[1] Department of Electrical Engineering, Tsinghua University, Haidian District, Beijing,100084, China
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2019年 / 39卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Thyristors - Switching - Power converters;
D O I：
10.13334/j.0258-8013.pcsee.181404
中图分类号：
学科分类号：
摘要：
Multilevel modulation operation of modular multilevel converter (MMC) reduces switching frequency of power switches greatly, which brings opportunities for application of integrated gate commutated thyristor (IGCT). This paper discussed high-voltage and high-power MMC scheme based on IGCT, and made a detailed analysis on topology, conduction and switching behaviors. Based on this, the performance of power loss of IGCT-MMC was analyzed comprehensively. At last, an experimental platform of IGCT-MMC was built, experimental research of large current switching-off and high power operation was conducted, and the results verified the correctness and effectiveness of IGCT-MMC. The research of the paper has practical significance and scientific value to promote IGCT for application in flexible high voltage direct current transmission (HVDC) and to achieve higher voltage, higher power, higher efficiency and higher reliability of flexible HVDC. © 2019 Chin. Soc. for Elec. Eng.
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页码：562 / 570
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