Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs

被引：0

作者：

Ji Q.-Z. ^{[1
,2
]}

Liu J. ^{[3
]}

Yang M. ^{[4
]}

Ma G.-L. ^{[1
]}

Hu X.-F. ^{[1
]}

Liu S.-H. ^{[1
]}

机构：

[1] Army Engineering University, National Key Laboratory on Electromagnetic Environment Effects, Shijiazhuang Campus, Hebei, Shijiazhuang

[2] Beijing Institute of Spacecraft Environment Engineering, Beijing

[3] School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Jiangsu, Nanjing

[4] Beijing Orient Institute of Measurement and Test, Beijing

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2023年 / 51卷 / 06期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN high electron mobility transistors; polarization; scattering; subthreshold swing;

D O I：

10.12263/DZXB.20230004

中图分类号：

学科分类号：

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) with different gate widths are prepared. The gate-channel carrier transport characteristics and the subthreshold swing (SS) are obtained by measuring the capacitance-voltage curve and transfer characteristic curve of each HEMT. The results show that the SS value decreases by 40.3% with gate width increasing from 10 μm to 50 μm. The factors affecting the subthreshold swing variation are analyzed qualitatively and quantificationally. It is found that different gate widths correspond to different polarization scattering intensity, and the SS behavior results from gate-channel carrier transport characteristics and polarization scattering effect. This provides a new perspective and dimension for AlGaN/GaN HEMTs switching performance optimization, which will promote its better application in wireless communication, power transmission and defense industry. © 2023 Chinese Institute of Electronics. All rights reserved.

引用

页码：1486 / 1492

页数：6

共 26 条

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