New SOA Design With Large Gain, Small Noise Figure, and High Saturation Output Power Level

被引：1
|
作者：
Yu, Shuqi [1 ,2 ]
Gallet, Antonin [1 ]
Demirtzioglou, Iosif [1 ]
Azouigui, Sheherazade Lamkadmi [1 ]
El Dahdah, Nayla [1 ]
Brenot, Romain [1 ]
机构：
[1] Huawei Technol France, Opt Commun Technol Lab, F-92100 Boulogne Billancourt, France
[2] Inst Polytech Paris, SAMOVAR, Telecom SudParis, CNRS, F-91120 Palaiseau, France
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2024年 / 60卷 / 02期
关键词：
Semiconductor optical amplifier (SOA); in-line amplifiers; large gain; high saturation output power; power consumption; noise figure; SEMICONDUCTOR OPTICAL AMPLIFIER;
D O I：
10.1109/JQE.2024.3356366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We introduce a semiconductor optical amplifier (SOA) chip with high gain (>40 dB) and high saturation power (>21 dBm) with moderate drive current (1.3A). A design model for optimizing the new dual-section SOA concept is presented. The model predictions are in very good agreement with the measurement results on fabricated chips. Using the gain and saturation output power product as the figure of merit, it shows the best-reported trade-off result so far. However, due to the slight degradation of the noise figure that ensued, an advanced design is introduced, enabling the optimization of the noise figure in addition to the gain and saturation output power.
引用
收藏
页码：1 / 7
页数：7
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