Design and preparation of grating for 808 nm semiconductor distributed feedback laser

被引：0

作者：

Ban X. ^{[1
,2
]}

Zhao Y. ^{[3
]}

Wang C. ^{[1
]}

Liu S. ^{[1
]}

Ma X. ^{[1
,2
]}

机构：

[1] National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors Chinese Academy of Sciences, Beijing

[2] College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing

[3] Beijing Danhua Technology Development Co., Beijing

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2019年 / 48卷 / 11期

关键词：

Distributed feedback; Dry etching; First-order grating; Nanoimprint; Semiconductor laser; Wet etching;

D O I：

10.3788/IRLA201948.1105003

中图分类号：

学科分类号：

摘要：

One of the core processes of semiconductor distributed feedback lasers was the fabrication of distributed feedback gratings, and the first-order Bragg grating structure of 808 nm distributed feedback semiconductor was designed. A trapezoidal grating structure with a period of 120 nm was fabricated by using nanoimprint technology combined with process of dry etching and wet etching. The optical field distribution and energy band diagram of epitaxial structure were simulated using MATLAB and Pics3D software. The ideal wet etching process parameters were obtained by optimizing the proportions of corrosion components used in wet etching, corrosion temperature and corrosion time. The scanning electron microscopy measurement shows that the grating has a period of 120 nm, depth about 85 nm, duty cycle about 47%, and the grating has the advantages of straight edges, smooth surface and even period. The innovative introduction of the wet etching process and the corrosion sacrificial layer ensures the cleanliness of the grating surface, improves the secondary epitaxial quality, which lays a good foundation for the further production of high-performance chips for distributed feedback lasers. © 2019, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.

引用

共 15 条

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