Revealing the structural and optical constant of the UiO-66 coated with MoS2 QDs

被引:0
|
作者
Aboraia, Abdelaziz M. [1 ]
Alraddadi, Shoroog [2 ]
Saad, M. [3 ]
Ismail, Yasser. A. M. [4 ]
Shaaban, E. R. [1 ]
机构
[1] Al Azhar Univ, Fac Sci, Phys Dept, Assiut Branch, Assiut 71524, Egypt
[2] Umm Al Qura Univ, Univ Coll AlJumum, Dept Phys, POB 715, Mecca 21955, Saudi Arabia
[3] King Khalid Univ, Coll Appl Med Sci, Dept Radiol Sci, Abha, Saudi Arabia
[4] Islamic Univ Madinah, Fac Sci, Dept Phys, Madinah 42351, Saudi Arabia
关键词
UiO-66 metal-organic framework; Optical properties; QDs; Thin film; MOF; XRD refinement; METAL-ORGANIC FRAMEWORKS;
D O I
10.1007/s11082-024-07348-w
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We synthesized the pristine and MoS2 QDs coated the UiO-66 nanostructures employing an eco-friendly drop casting method and studied the physical properties of nanostructures by experimental methods. The X-ray diffraction analysis confirmed that all samples exhibit a singular cubic phase with space group Fm3m. The presence of MoS2 quantum dots coating led to an observed growth in crystalline size and an increase in structural defects. A rise in the optical energy gap (4.02-5.05 eV) and an improvement in transmittance were noted as the concentration of coated MoS2 quantum dots increased. The film thickness of UiO-66@X%MOS2 (X% = 0, 10, 15, 20, and 25) was around 140 +/- 5 nm and the increase in the concentration of MoS(2)QDs was found to be inversely proportional to the decrease in refractive index. The absolute part values of the dielectric constant (epsilon(1)) are more significant than the imaginary part (epsilon(2)). Optical conductivity decreases with the higher content of embedded MoS2 QDs (from 2.75 x 10(10) to 1.75 x 10(10)) at wavelengths 300-250 nm. Thus, MoS2 QDs-coated UiO-66 nanostructures show suitable potential applications in: optoelectronics, efficient conversion of energy, and numerous other works implemented in the sphere of nanotechnology.
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页数:15
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