Interface-Embedded Pt-Plasmons Enhanced Self-Powered Deep-UV Photodetector

被引:5
|
作者
Zheng, Zhihua [1 ]
Xiong, Zhongshu [2 ]
Xu, Linlin [1 ]
Wu, Feng [1 ]
Kim, Munho [2 ]
Mao, Jiaxing [3 ]
He, Yunbin [3 ]
Xu, Jintong [4 ]
Dai, Jiangnan [1 ]
Chen, Changqing [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Hubei Univ, Sch Mat Sci & Engn, Wuhan 430062, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
关键词
Deep-UV photodetector; embedded plasmons; Pt nanoparticles; beta-Ga2O3; SOLAR-BLIND PHOTODETECTOR; PHOTORESPONSE; PERFORMANCE; HETEROJUNCTION; ULTRAHIGH;
D O I
10.1109/LED.2024.3359668
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Motivated by improving the performance of self-powered deep-UV (DUV) photodetector (PD), for the first time, Pt plasmonic nanoparticles (NPs) were embedded in hybrid PEDOT: PSS/beta-Ga2O3 heterojunction interface to maximize light-matter interaction. Profiting from the maximized direct enhancement of the optical field in active region by Pt plasmonic NPs resonance coupling, the increased light absorption excites abundant photo-generated carriers, which are rapidly separated by spatially coincident strong junction electric field. As a result, the resultant PD exhibits higher photocurrent and obtains an improved responsivity of 55.4 mA/W, EQE of 27 %, detectivity of 1.9x 10(14) Jones, and faster response speed under self-powered mode. The optimized optical field in active region caused by embedded Pt plasmons resonance coupling is the reason for the improvement of light absorption and photoresponsivity, which is verified by theoretical simulation. This work demonstrates for embedded plasmonic enhancement in DUV spectral region, providing an innovative pathway for the optimized design of high-sensitivity DUV PDs.
引用
收藏
页码:633 / 636
页数:4
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