Preparation of high performance Ga2O3 based ultraviolet photodetector by CVD

被引：1
|
作者：
Wang, Xiao [1 ]
Cheng, Qiao [1 ]
Rong, Ximing [1 ]
Han, Shun [1 ]
Zeng, Yuxiang [1 ]
Cao, Peijiang [1 ]
Fang, Ming [1 ]
Liu, Wenjun [1 ]
Zhu, Deliang [1 ]
Lu, Youming [1 ]
机构：
[1] Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenz
来源：
Journal of Solid State Chemistry | 2023年 / 317卷
关键词：
Here; β-Ga2O3 films have been grown on c-Al2O3 and p-GaN substrates by chemical vapor deposition method to fabricate solar-blind ultraviolet photodetectors with MSM-type planar structure and pn-junction vertical structure respectively. The β-Ga2O3 films grown with domain growth mode exhibit high crystallinity and flat surface; so the fabricated MSM-type photodetector shows spectral peak responsivity of 1.83 A/W at 254 ​nm and photo-to-dark current ratio of 104 under 25 ​V bias with 20% oxygen fraction and 120 sccm flow rate. On this basis; the constructed vertical structured β-Ga2O3/p-GaN heterojunction photodetector shows peak responsivity of 1.99 A/W under 25 ​V for the junction effect between β-Ga2O3 and p-GaN. Meanwhile; spectral responsivity peak of 1.36 ​× ​10−4 A/W at 0V claims significant self-powered effect induced by build-in electric field between β-Ga2O3 and p-GaN. These results confirm that high performance β-Ga2O3 solar-blind ultraviolet photodetectors can be obtained by simple chemical vapor deposition method. © 2022 Elsevier Inc;
D O I：
10.1016/j.jssc.2022.123662
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