An Ultra-Low Leakage and Wide-Range Voltage Level Shifter for Low-Power Digital CMOS VLSIs

被引:0
|
作者
Yuan, Ang [1 ,2 ]
Zhao, Huidong [1 ,2 ]
Wang, Xiao [1 ,2 ]
Li, Zhi [1 ,2 ]
Qiao, Shushan [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100029, Peoples R China
关键词
Transistors; Power demand; Current mirrors; Voltage; Propagation delay; Hysteresis; Delays; Level shifter; ultra-low power; multi-supply voltage circuit; sub-threshold operation; ENERGY-EFFICIENT; SUBTHRESHOLD;
D O I
10.1109/TCSII.2023.3323016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents an ultra-low leakage and fast conversion level shifter with wide-range voltage conversion and frequency. The proposed level shifter adopts the leakage shut-off transistors, which can completely cut off the static current when the circuits stand by. The pull-down network employs the low-threshold transistor for the fast fall transition. The proposed level shifter also solves the swing problem and achieves a fast conversion by using the voltage hysteresis transistor, strengthening the pull-up network to ensure the internal node is fast and fully charged. Measurement results based on the 55 nm process show that the average ultra-low leakage of the proposed level shifter is 34.8 pW when converting from 0.3 V input to 1.2 V output. Meanwhile, the average propagation delay and the average energy per transition of the proposed level shifter are 13.86 ns and 22.71 fJ for an input frequency of 1 MHz, respectively. The maximum conversion range is from 0.13 V to 1.2 V.
引用
收藏
页码:1406 / 1410
页数:5
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