InP + CMOS Heterogeneous Integration Generation of for Wireless The Next Generation of Wireless

被引：0
|
作者：
Collaert, Nadine [1 ]
Peeters, Michael [1 ]
机构：
[1] imec, Leuven, Belgium
来源：
Microwave Journal | 2022年 / 65卷 / 11期
关键词：
CMOS integrated circuits - Commerce - III-V semiconductors - Printed circuit boards - Semiconducting indium phosphide - Semiconductor device manufacture - Silicon compounds;
D O I：
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学科分类号：
摘要：
Early discussions of the capabilities that will enable 6G envision materials and devices operating above 100 GHz. Indium phosphide (InP) is one semiconductor technology with the characteristics to achieve the required speed, efficiency and output power for sub-THz frequencies. To serve global wireless markets, InP process technology must be commercialized to maintain the performance advantages while able to be mass produced at the requisite prices to meet market needs. To develop InP into a mature technology, imec is researching nano-ridge engineering to grow InP on Si. Then, to integrate all the semiconductor components into a multi-function communications circuit, imec is exploring printed circuit board (PCB), 2.5D and 3D packaging technologies. © 2022 Horizon House. All rights reserved.
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页码：50 / 56
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