Filling the Gap: Silicon Terahertz Integrated Circuits Offer Our Best Bet

被引：0

作者：

Han, Ruonan ^{[1
]}

Hu, Zhi ^{[1
]}

Wang, Cheng ^{[1
]}

Holloway, Jack ^{[1
]}

Yi, Xiang ^{[1
]}

Kim, Mina ^{[1
]}

Mawdsley, James ^{[1
]}

机构：

[1] Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, United States

来源：

IEEE Microwave Magazine | 2019年 / 20卷 / 04期

基金：

美国国家科学基金会;

关键词：

Millimeter waves - Timing circuits - Integrated circuits - Silicon;

D O I：

10.1109/MMM.2019.2891379

中图分类号：

学科分类号：

摘要：

The definition for the frequency range of a terahertz wave varies in the literature. Some refer to terahertz as the spectrum between 300 GHz (λ = 1 mm) and 3 THz (λ = 0.1 mm) to distinguish it from its millimeter-wave counterpart (30-300 GHz). Others adopt a decimal pattern and a loosely defined frequency range from 100 GHz to 10 THz. Based on the latter definition, probably the earliest documented endeavor to reach terahertz frequency was published in a paper in Physical Review in 1923 [1]. In this nearly century-old work, authors Nichols and Tear generated a 0.17-THz signal using a spark-gap oscillator, detected it with a radiometer vane, and analyzed the spectrum through a Boltzmann interferometer. © 2000-2012 IEEE.

引用

页码：80 / 93

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