Observation of Landau levels and chiral edge states in photonic crystals through pseudomagnetic fields induced by synthetic strain

被引:2
|
作者
Barczyk, Rene [1 ]
Kuipers, L. [2 ]
Verhagen, Ewold [1 ]
机构
[1] AMOLF, Ctr Nanophoton, Amsterdam, Netherlands
[2] Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands
基金
欧洲研究理事会;
关键词
Photonic crystals;
D O I
10.1038/s41566-024-01412-3
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Control over light propagation and localization in photonic crystals offers wide applications ranging from sensing and on-chip routing to lasing and quantum light-matter interfaces. Although in electronic crystals, magnetic fields can be used to induce a multitude of unique phenomena, the uncharged nature of photons necessitates alternative approaches to bring about similar control over photons at the nanoscale. Here we experimentally realize pseudomagnetic fields in two-dimensional photonic crystals through engineered strain of the lattice. Analogous to strained graphene, this induces flat-band Landau levels at discrete energies. We study the spatial and spectral properties of these states in silicon photonic crystals at telecom wavelengths with far-field spectroscopy. Moreover, taking advantage of the photonic crystal's design freedom, we realize domains of opposite pseudomagnetic field and observe chiral edge states at their interface. We reveal that the strain-induced states can achieve remarkably high quality factors despite being phase matched to the radiation continuum. Together with the high density of states and high degeneracy associated with flat bands, this provides powerful prospects for enhancing light-matter interactions, and illustrates the broad potential of psdeudomagnetic fields in the nanophotonic domain. This work, thus, establishes a new design principle to govern both on-chip and radiating light fields. Strain-engineered pseudomagnetic fields realized in two-dimensional photonic crystals induce flat-band Landau levels at discrete energies as well as chiral edge states. The high density of states and high degeneracy of the flat bands has implications for both on-chip and radiating light fields.
引用
收藏
页码:574 / 579
页数:16
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