Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Capacitance and conductance measurements were made to evaluate the effects of voltage and frequency on the dielectric properties, ac electrical conductivity (sigma(ac)), and electric-modulus of the Al/%0.5 Bi:ZnO/p-Si structures. The measurements were taken in a voltage range of (- 4 V)-(+ 4 V) and frequency range of 0.1-1 MHz, respectively. All parameters were discovered to have substantial relationships to voltage and frequency at accumulation and depletion regions due to relaxation mechanisms and interface traps positioned between %0.5 Bi:ZnO interlayer and p-Si with energies in the Si bandgap. The e'-V, M''-V, and Z''-V plots all demonstrate a peak, and because of electronic charges being reordering and restructuring at surfaces, traps, and dipole-polarization under the external electric field, the peak's position and magnitude vary with frequency. The double logarithmic sigma ac-w curve shows linear behaviour, its slope was found as 0.699, and this value of the Al/%0.5 Bi:ZnO/p-Si/Au structure has high ac conductivity or low resistivity. The observed high changes in the dielectric constant and dielectric loss (e', e'') were explained by Maxwell-Wagner type polarization as well as interface traps.