Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements

被引:2
|
作者
Lin, Wenxin [1 ]
Huang, Jiangxia [1 ]
Li, Shuxin [1 ]
Blom, Paul W. M. [2 ]
Feng, Haonan [1 ]
Li, Jiahao [1 ]
Lin, Xiongfeng [3 ]
Guo, Yulin [3 ]
Liang, Wenlin [3 ]
Wu, Longjia [3 ]
Niu, Quan [1 ]
Ma, Yuguang [1 ]
机构
[1] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510006, Peoples R China
[2] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
[3] TCL Corp Res, Shenzhen 516002, Peoples R China
基金
中国国家自然科学基金;
关键词
HOLE INJECTION; TRANSPORT; PERFORMANCE; MOBILITY; EFFICIENT;
D O I
10.1063/5.0180211
中图分类号
O59 [应用物理学];
学科分类号
摘要
Limited stability of blue quantum dot light-emitting diodes (QLEDs) under current stress impedes commercialization. Multi-layer structures of the state-of-the-art blue QLEDs pose significant difficulty in the fundamental understanding of degradation mechanisms. Here, by applying transient electroluminescence measurements, we disentangle charge transport in both pristine and degraded blue QLEDs. By varying thicknesses of the charge transport layers and the emissive layer, respectively, we show that the charge transport in pristine QLEDs is primarily dominated by holes. Furthermore, the degradation of QLEDs under electrical stress is governed by the decrease of hole transport in the emissive quantum dot layer due to the formation of hole traps.
引用
收藏
页数:10
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