Bending Analysis of Circular Piezoelectric Semiconductor Plates Incorporating Flexoelectricity

被引:1
|
作者
Sun, Liang [1 ,2 ]
Xiao, Zhengguang [1 ]
Zhang, Chunli [1 ,3 ]
Chen, Weiqiu [1 ,3 ]
机构
[1] Zhejiang Univ, Dept Engn Mech, Hangzhou 310027, Peoples R China
[2] Naval Univ Engn, Dept Basic Courses, Wuhan 430033, Peoples R China
[3] Huanjiang Lab, Zhuji 311816, Peoples R China
基金
中国国家自然科学基金;
关键词
Piezoelectric semiconductor; Plate model; Flexoelectricity; Multi-field coupling; CARRIER DISTRIBUTION; PIEZOTRONICS; NANOWIRE;
D O I
10.1007/s10338-024-00466-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on the three-dimensional (3D) basic equations of piezoelectric semiconductors (PSs), we establish a two-dimensional (2D) deformation-polarization-carrier coupling bending model for PS structures, taking flexoelectricity into consideration. The analytical solutions to classical flexure of a clamped circular PS thin plate are derived. With the derived analytical model, we numerically investigate the distributions of electromechanical fields and the concentration of electrons in the circular PS thin plate under an upward concentrated force. The effect of flexoelectricity on the multi-field coupling responses of the circular PS plate is studied. The obtained results provide theoretical guidance for the design of novel PS devices.
引用
收藏
页码:613 / 621
页数:9
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