CZOCHRALSKI SILICON CRYSTAL GROWTH IN NITROGEN ATMOSPHERE UNDER REDUCED PRESSURE

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作者：
阙端麟
李立本
陈修治
林玉瓶
张锦心
周晓
杨建松
机构：
[1] Department of Materials Science
[2] Zhejiang University
[3] Hangzhou
[4] PRC
[5] Hangzhou
来源：
Science in China,Ser.A. | 1991年 / Ser.A.1991卷 / 08期
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摘要：
<正> The experimental results of Czochralski silicon (CZ-Si) crystal growth in nitrogen at-mosphere are reported. The chemical reaction between silicon and nitrogen under reduced pres-sures is studied. Nitrogen gas flow under reduced pressure can eliminate the SiO smokes,and high yield of dislocation-free single crystals can be obtained. Silicon with low carbonconcentration grown by this method exhibits good electrical properties. Heat treatment be-haviours of the Si crystals have been studied. After tri-step intrinsic gettering heat treat-ment, ideal clean denuded zone is formed in Si-wafers.
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页数：8
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